[21p-M206-1~9] Forefront of interface science and technology of wide bandgap semiconductor MOS devices

[21p-M206-6] MOSFET Interfaces of Wide Gap Semiconductors Studied by Computational Science

〇Kenji Shiraishi¹, Atsushi Oshiyama¹ (1.Nagoya Univ.)

Keywords:GaN, SiC, MOSFET Interface

MOSFET interfaces of SiC and GaN have attracted much attentions, because it directly relrated to the power device performance. However, SiC/SiO₂ and GaN/SiO₂ interfaces have many problems such as large interface defect densities. In this talk, we focu on the characteristics of SiC/SiO₂ and GaN/SiO₂ interface from a view point of computational sciences.