[21p-M206-1~9] Forefront of interface science and technology of wide bandgap semiconductor MOS devices

[21p-M206-7] Characteristics SiO₂/β-Ga₂O₃ MOS Stacks and Their Change by Annealing Processes

〇Koji Kita¹ (1.Univ. of Tokyo)

Keywords:widegap semiconductor, gallium oxide, MOS interface

β-Ga₂O₃ is expected to be applied to power devices due to its large band gap and rapid progress in crystal growth technology, but MOS interface formation technology has not yet been established. In this study, SiO₂, which has a large conduction band offset against Ga₂O₃ and is not reactive with it, was applied as a gate dielectric. After 1000℃ annealing, an atomically flat interface was maintained and good MOS characteristics were obtained. The interface conduction band offset of about 3 eV was roughly consistent with the UPS evaluation results for Ga₂O₃ surface.