[21p-M206-1~9] Forefront of interface science and technology of wide bandgap semiconductor MOS devices

[21p-M206-8] Nitrogen and silicon double-implanted β-Ga₂O₃ MOSFETs with breakdown voltage > 1 kV

〇Hironobu Miyamoto¹, Yuki Koishikawa¹, Daiki Wakimoto¹, Kohei Sasaki¹, Akito Kuramata¹ (1.Novel Crystal Technology, Inc.)

Keywords:Gallium oxide, Transistor, breakdown voltage

Inversion-type double implanted Ga₂O₃ MOS transistors were fabricated on a 12-μm thick unintentionally-doped-Ga₂O₃ epitaxial layer (2×10¹⁶ cm^-3) grown by HVPE on a conductive (>2×10¹⁸ cm^-3) Ga₂O₃ substrate. Nitrogen ions were implanted to form current blocking layers for vertical source–drain isolation and lateral channel layers under the gate, while Si ions were implanted to form degenerately doped source contact regions. The device properties dependence on the nitrogen concentration in current blocking layers and lateral channel layers were evaluated. As the Nitrogen concentration increased from 1x10¹⁸ to 6x10¹⁸ cm^-3, a threshold voltage increased from 6.6 V to 8.5 V and a breakdown voltage increased from 258 V to 1080 V.