[22a-A102-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[22a-A102-10] Impact of buried nanomagnet technology on one-dimensionally integrated silicon qubits

〇Shota Iizuka¹, Kimihiko Kato¹, Atsushi Yagishita¹, Hidehiro Asai¹, Tetsuya Ueda¹, Hiroshi Oka¹, Junichi Hattori¹, Tsutomu Ikegami¹, Koichi Fukuda¹, Takahiro Mori¹ (1.AIST)

Keywords:Silicon spin qubits, Variation tolerance, One-dimensional integration