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[22a-A307-5] Investigation of room-temperature wafer bonding of anisotype materials
Keywords:room-temperature wafer bonding
Room-temperature wafer bonding has been an effective bonding method for wafers with different lattice constants and thermal expansion coefficients in fabricating high-efficiency solar cells. However, there are few reports of systematic experiments changing the bonding conditions of the room-temperature bonding (RTWB) equipment with Fast Atom Beam (FAB). In this study, anisotype substrates were bonded under various conditions using RTWB equipment, and the electrical characteristics of the bonded wafers were evaluated. The bonded sample with the lower applied voltage showed the lower resistance at 0 voltage bias. This phenomenon is thought to be due to the damage to the bonded interfaces.