[22a-B102-1~6] 15.2 II-VI and related compounds

[22a-B102-5] Investigation of asymmetric double barrier structures in MgZnCdSe/ZnCdSe resonant tunneling diodes on InP substrates

〇(M2)Guancan Xie¹, Peijie Yang¹, Nomura Ichiro¹ (1.Sophia Univ.)

Keywords:II-VI semiconductor, resonant tunneling diodes

So far, we have produced a resonant tunneling diode (RTD) in which the MgSe double barrier layer is sandwiched between ZnCdSe layers, and confirmed the differential negative resistance at room temperature. In this study, we report the theoretical study of the effect of the asymmetric barrier structure with the aim of improving the performance of RTD characteristics.