[22a-B102-1~6] 15.2 II-VI and related compounds

▲ [22a-B102-6] Interface chemical reaction during MBE growth of MgF2 on Si depending on thermal processes: Towards a new growth technique for epitaxial MgSiN2

〇ZHEFU LIU¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech)

Keywords:Crystal growth, MgF2, MgSiN2