[22a-B202-1~11] 17.3 Layered materials

[22a-B202-5] Development of logic circuit using anti-ambipolar transistors based on two dimensional thin films

〇Yoshitaka Shingaya¹, Amir Zulkefli¹, Takuya Iwasaki¹, Ryoma Hayakawa¹, Shu Nakaharai¹, Kenji Watanabe¹, Takashi Taniguchi¹, Yutaka Wakayama¹ (1.NIMS)

Keywords:anti-ambipolar transistor, logic circuit, Transition metal dichalcogenides

We report on the fabrication of anti-ambipolar transistors(AAT) that exhibit characteristics similar to negative differential resistance at room temperature by combining two-dimensional thin-film materials to realize logic circuit. We reported that dual-gate type anti-ambipolar transistors can realize AND, OR, NAND, NOR, and XOR circuits with a single element by optimizing the input voltage. In the previous presentation, the AAT was fabricated on SiO₂ substrate, this time the device performance was improved by fabricating the AAT on h-BN.