[22a-B204-1~11] 13.7 Compound and power devices, process technology and characterization

[22a-B204-11] 3-dimensional imaging of transient variation of temperature distribution
in silicon wafers during Joule’s heating

〇(M2)Kotaro Matsuguchi¹, Jiawen Yu¹, Hiroaki Hanafusa¹, Takuma Sato¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

Keywords:silicon, thermometry, thermal runaway