[22a-C200-1~10] 15.4 III-V-group nitride crystals

[22a-C200-1] Characterizations of microstructures in semipolar (10-13) AlN epilayer

〇Xu-Qiang Shen¹, Hirofumi Matsuhata¹, Kazutoshi Kojima¹ (1.AIST)

Keywords:AlN, semipolar

We have developed a new growth technique, named ammonia-free high temperature MOCVD. We succeeded in growing high quality semipolar (10-13) AlN epilayer on m-plane sapphire substrates by the technique, which is extremely difficult by using conventional growth techniques. In this presentation, we report the microstructure characterization results in the semipolar AlN epilayer.