[22p-A202-1~22] 6.2 Carbon-based thin films

△ [22p-A202-19] Buried growth of p⁺ film on atomically flat N-doped diamond (111) by lateral growth with heavy B-doping

〇(D)Kazuki Kobayashi¹, Xufang Zhang¹, Toshiharu Makino², Tsubasa Matsumoto¹, Takao Inokuma¹, Satoshi Yamasaki¹, C.E. Nebel^1,3, Norio Tokuda¹ (1.Kanazawa Univ., 2.AIST, 3.Diacara)

Keywords:diamond, atomically flat surface, burying growth

Selective burial of impurity-doped diamond layers is necessary to improve the performance of diamond power devices. However, a buried layer formation of impurity doped diamond using the ion implantation method is also extremely difficult because many lattice defects are generated during the ion implantation process and the activation annealing technique has not been established. We have proposed a new selectively buried layer formation technique of impurity doped diamond by combining the homoepitaxial lateral growth with inductively coupled plasma (ICP) etching techniques.
In this study, we will report the details of the burying process.