[22p-A202-1~22] 6.2 Carbon-based thin films

△ [22p-A202-20] X-ray diffraction characterization of inch-diameter high-quality CVD diamond layers grown on sapphire substrates in comparison to MgO substrates

〇(M2)Ryo Masaki¹, Ryota Takaya¹, Koji Koyama², Makoto Kasu¹, Seongwoo Kim² (1.Saga Univ., 2.Adamant Namiki Precision Jewel Co.,Ltd)

Keywords:Diamond semiconductor, sapphire, Heteroepitaxial Growth

Compared to GaN and SiC, diamond has a higher dielectric breakdown electric field and carrier mobility, so it is expected to be a next-generation power device that controls power with high frequency and high efficiency. Although large diameter wafers are required for practical use, we have succeeded in growing the highest quality heteroepitaxial diamond with a diameter of 2 inches on a sapphire substrate. Here, we report the growth mechanism of heteroepitaxial diamond on a sapphire substrate using X-ray diffraction as compared to a conventional MgO substrate.