[22p-A202-1~22] 6.2 Carbon-based thin films

[22p-A202-21] Initial growth process of inch-diameter high-quality CVD diamond layers grown on sapphire substrates in comparison to MgO substrates

〇(M2)Ryo Masaki¹, Ryota Takaya¹, Koji Koyama², Makoto Kasu¹, Seongwoo Kim² (1.Saga Univ., 2.Adamant Namiki Precision Jewel Co., Ltd.)

Keywords:Diamond semiconductor, sapphire, Initial growth process

Compared to GaN and SiC, diamond is expected as a next-generation power device that controls power with high frequency and high efficiency due to its high dielectric breakdown electric field and carrier mobility. While large-diameter wafers are required for practical use, we have succeeded in growing the highest quality heteroepitaxial diamond with a diameter of 2 inches on a sapphire substrate. Here, we report the initial process of growth of heteroepitaxial diamond on a sapphire substrate mainly using AFM, as compared with the conventional MgO substrate.