[22p-A202-1~22] 6.2 Carbon-based thin films

▼ [22p-A202-22] Improved Crystal Quality of Diamond Grown on c-Direction Misoriented Sapphire Substrate

〇(M1)JACQUES DAGBETO¹, Koji Koyama², Makoto Kasu¹, Seongwoo Kim² (1.Saga Univ., 2.Adamant Namiki Precision Jewel Co., Ltd)

Keywords:Diamond semiconductor, misoriented sapphire substrate, heteroepitaxial diamond

Diamond power device characteristics exceed SiC and GaN because of its exceptional physical properties, such as high break-down electric field (>10 MV/cm), extremely high thermal conductivity (22W/cm K), and high carrier mobility (4500 for electrons and 3800 cm² /Vs for holes). Recently we have demonstrated diamond MOSFETs fabricated on heteroepitaxial diamond grown on sapphire substrate, which showed a maximum drain current density of 0.68 A/mm, with an estimated specific ON-resistance of 7.54 mΩ.cm²/V and BFOM output of 874.6 MW/cm². Kim et al. reported a 2-inch high-quality (001) heteroepitaxial diamond on sapphire (110) misoriented 7^o substrate in [100] m-direction with XRC FWHM 004 and 311 to be as low as 98.35 and 175 arcsec, respectively.