[22p-A202-1~22] 6.2 カーボン系薄膜

▼ [22p-A202-22] Improved Crystal Quality of Diamond Grown on c-Direction Misoriented Sapphire Substrate

〇(M1)JACQUES DAGBETO¹、Koji Koyama²、Makoto Kasu¹、Seongwoo Kim² (1.Saga Univ.、2.Adamant Namiki Precision Jewel Co., Ltd)

キーワード：Diamond semiconductor, misoriented sapphire substrate, heteroepitaxial diamond

Diamond power device characteristics exceed SiC and GaN because of its exceptional physical properties, such as high break-down electric field (>10 MV/cm), extremely high thermal conductivity (22W/cm K), and high carrier mobility (4500 for electrons and 3800 cm² /Vs for holes). Recently we have demonstrated diamond MOSFETs fabricated on heteroepitaxial diamond grown on sapphire substrate, which showed a maximum drain current density of 0.68 A/mm, with an estimated specific ON-resistance of 7.54 mΩ.cm²/V and BFOM output of 874.6 MW/cm². Kim et al. reported a 2-inch high-quality (001) heteroepitaxial diamond on sapphire (110) misoriented 7^o substrate in [100] m-direction with XRC FWHM 004 and 311 to be as low as 98.35 and 175 arcsec, respectively.