[22p-A205-1~18] 10.2 スピン基盤技術・萌芽的デバイス技術

▲ [22p-A205-5] Demonstration of tuning the Hanle magnetoresistance in an ultrathin platinum film by ionic gate.

〇Yuu Maruyama¹、Ryo Ohshima¹、Ei Shigematsu¹、Yuichiro Ando¹、Masashi Shiraishi¹ (1.Kyoto Univ.)

キーワード：Hanle magnetoresistance, ionic gate

The spin Hall effect (SHE), which generates spin current from electric current via spin-orbit interaction (SOI), has been gathering a lot of attention. It has been believed that the SOI and the efficiency of the SHE, the spin Hall angle (SHA), was material-specific and was not easy to modulate. However, by utilizing an ionic gating technique to the nanometer-thick Pt (ultrathin Pt), the reciprocal effect of the SHE, the inverse spin Hall effect (ISHE), was successfully modulated. This result opened a door for gate-tunable spin-current generation in metals. The origin of the modulation stems from the modulation of the SOI. To obtain further aspects of the phenomenon, we observed one of the SOI related phenomena, the Hanle magnetoresistance (HMR), which occurs by the combination of the SHE and the ISHE and can be measured in the ultrathin Pt with utilizing an ionic gate technique.