[22p-A306-1~7] 11.5 Junction and circuit fabrication process, digital applications

[22p-A306-6] Uniformity of TiN films grown on Si (100) substrates

〇Hirotaka Terai¹, Kunihiro Inomata², Atsushi Kobayashi³, Hiroshi Fujioka³, Hiroki Yoshinaka⁴, Tsuyoshi Kodama⁴, Yuuji Hishida¹, Sunmi Kim¹, Taro Yamashita⁵, Tomoko Fuse¹, Fumiki Yoshihara^1,6, Kouichi Semba^1,7 (1.NICT, 2.AIST, 3.IIS, Univ. of Tokyo, 4.Hamamatsu Photonics, 5.Tohoku Univ., 6.Tokyo Univ. of Sci., 7.Univ. of Tokyo)

Keywords:superconductor, superconducting qubit, superconducting resonator

In order to improve the reproducibility of resonance frequencies of superconducting coplanor waveguide (CPW) resonators made of TiN films, it is necessary to investigate uniformity of film thickness and properties (resistivity and Tc). And investigation of crystallographic structure and chemical composition of film surface is also important to improve the internal quality fators of TiN CPW resonator and coherence time of superconducting qubits. In this presentation, we report the results on characterization of TiN films including uniformity of film thicknesses and properties on 3-inch Si wafers, crystallographic structure, surface roughness, chemical composition of film surface and internal quality factors observed in TiN CPW resonators.