16:15 〜 16:30
▼ [22p-A307-11] Demonstration of Ferroelectricity of 10 nm YHO7 Thin Film through Piezoelectric Force Microscopy
キーワード：Doped HfO2, Ultra thin ferroelectric films, Piezoelectric force microscopy
Till date, ferroelectric materials have been intriguing incremental interest since the discovery of its multi-polarized states which could be electrically controlled. Ultrathin ferroelectric films have been vastly developed for meeting the pressing need of miniaturized electronics including ferroelectric tunneling junctions. 7% Yttrium doped HfO2 (YHO7) is considered as a robust composition and has shown promising ferroelectric property grown on single crystallized substrate with an ultrathin thickness.
In this study, polycrystalline 10 nm-thick YHO7 thin film was fabricated by Radio frequency magnetron sputtering on platinized quartz substrate. Ferroelectricity of YHO7 thin film was demonstrated by Piezoelectric force microscopy (PFM) with phase and amplitude contrast images after being poled by a bias voltage and the corresponding hysteresis loops further proved the occurring of 180o phase flipping.
In this study, polycrystalline 10 nm-thick YHO7 thin film was fabricated by Radio frequency magnetron sputtering on platinized quartz substrate. Ferroelectricity of YHO7 thin film was demonstrated by Piezoelectric force microscopy (PFM) with phase and amplitude contrast images after being poled by a bias voltage and the corresponding hysteresis loops further proved the occurring of 180o phase flipping.