[22p-A307-1~17] CS.7 Code-sharing Session of 6.1 & 13.3 & 13.5

[22p-A307-17] Effect of Applying Electric Field during Annealing on Hf_0.5Zr_0.5O₂ Thin Films

〇(M1)Sho Tanaka¹, Minoru Noda¹ (1.Kyoto Inst. Tech.)

Keywords:Ferroelectric

Recently, it was discovered that hafnia-based ferroelectric thin films can be made into ultra-thin films down to nm-order. They are expected to be used as materials for ultrahighly integrated and high-performance next-generation non-volatile memory devices that are superior to the current FeRAM. However, the origin of hafnia-based ferroelectrics is the metastable o-phase, and the stabilization of this phase is difficult. There are still difficulties such as poor endurance properties and unclear conditions for the stabilization. In this work, we studied the possibility of stabilizing the metastable phase under a wider range of conditions by applying an electric field during annealing.