5:15 PM - 5:30 PM
△ [22p-B202-15] Thermal annealing effects on Graphene/n-Si Schottky solar cell
Keywords:Graphene, Solar cell, Thermal annealing
Graphene/n-Si Schottky junction solar cell has attracted much attention as the next-generation solar cell due to the low-cost and the high-efficiency. Thermal annealing has been considered to be one of most effective way to improve the performance of the solar cell by removing the PMMA residues, which remain after the transfer of graphene onto the n-Si substrate. Here, we report the underlying mechanism of thermal annealing effects by systematical studies using the J-V characteristics and the transient photovoltage/photocurrrent measurements.