[22p-B202-1~17] 17.2 Graphene

△ [22p-B202-7] Barrier height control of graphene nanoribbon-based integrated quantum dot devices

〇(M1)Tatsuki Kato¹, Toshiro Kaneko¹, Toshiaki Kato¹ (1.Tohoku Univ.)

Keywords:graphene nanoribbon, quantum dot, integration

We have succeeded in synthesizing graphene nanoribbons (GNRs), a semiconductor with unique electrical properties derived from graphene, by plasma CVD for large-scale integration. In this study, we attempted to use the Schottky barrier formed between GNR and electrode as a confinement barrier for quantum dots in order to apply the synthesized GNR devices to quantum dot applications. Detailed measurements under different temperature conditions revealed that the barrier height can be well controlled by the metal species used for the electrode.