The 83rd JSAP Autumn Meeting 2022

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13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

[22p-B204-1~18] 13.7 Compound and power devices, process technology and characterization

Thu. Sep 22, 2022 1:30 PM - 6:15 PM B204 (B204)

Masashi Kato(Nagoya Inst. of Tech.)

5:45 PM - 6:00 PM

[22p-B204-17] Diamond Schottky barrier diode fabricated by all B ion implantation

〇Yuhei Seki1, Seiya Shigematsu2, Toshiyuki Oishi2, Makoto Kasu2, Yasushi Hoshino1, Jyoji Nakata1 (1.Kanagawa Univ., 2.Saga Univ.)

Keywords:semiconductor, ion implantation, Diamond