Oral presentation

13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

[22p-B204-1~18] 13.7 Compound and power devices, process technology and characterization

Thu. Sep 22, 2022 1:30 PM - 6:15 PM B204 (B204)

Masashi Kato(Nagoya Inst. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

△ [22p-B204-1] Suppression of a GaO_x layer at SiO₂/GaN MOS Interface by Sputter Deposition of SiO₂

〇(B)Kentaro Onishi¹, Takuma Kobayashi¹, Hidetoshi Mizobata¹, Mikito Nozaki¹, Akitaka Yoshigoe², Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.JAEA)

1:45 PM - 2:00 PM

[22p-B204-2] Suppression of Ga diffusion in SiO₂/GaN Structures Formed by Sputter Deposition of SiO₂

〇(B)Kentaro Onishi¹, Takuma Kobayashi¹, Hidetoshi Mizobata¹, Mikito Nozaki¹, Akitaka Yoshigoe², Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.JAEA)

2:00 PM - 2:15 PM

△ [22p-B204-3] Study of intermediate layer of SiO₂/GaN interface by first-principles calculation

〇(M1)Shuto Hattori¹, Atsushi Oshiyama², Kenji Shiraishi^2,1, Seiichi Miyazaki¹, Heiji Watanabe³, Katsunori Ueno⁴, Ryou Tanaka⁴, Tsurugi Kondou⁴, Shinya Takashima⁴, Masaharu Edo⁴ (1.Graduate School of Eng, Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Graduate School of Eng, Osaka Univ., 4.Fuji Electric)

2:15 PM - 2:30 PM

[22p-B204-4] Investigation of high-concentration p-type GaN by shallow implantation of Mg and N

〇Ryo Tanaka¹, Shinya Takashima¹, Masaharu Edo¹, Jun Uzuhashi², Tadakatsu Ohkubo², Jun Chen², Takashi Sekiguchi² (1.Fuji Electric, 2.NIMS)

2:30 PM - 2:45 PM

[22p-B204-5] Expansion of Optimized Dose Range for Junction Termination Extension Structure of GaN Vertical Power Devices by Utilizing Mg Channeling Implantation

〇Kazuki Kitagawa¹, Maciej Matys², Tetsu Kachi², Jun Suda^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

2:45 PM - 3:00 PM

[22p-B204-6] Annealing temperature dependence of hole concentration for Mg-ion-implanted GaN

〇Masato Omori¹, Kenta Watanabe², Tatsuya Tsuboi¹, Shounichi Hidaka¹, Takashi Okawa² (1.Oita Uni., 2.MIRISE Tec.)

3:00 PM - 3:15 PM

[22p-B204-7] Luminescence studies of Mg-implanted p-type GaN by ultra-high-pressure annealing

〇Kohei Shima¹, Hideki Sakurai^2,3,4, Shoji Ishibashi⁵, Akira Uedono⁶, Michal Bockowski^2,7, Jun Suda^2,3, Tetsu Kachi², Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ., 2.IMaSS-Nagoya Univ., 3.Nagoya Univ., 4.ULVAC ATI, 5.AIST, 6.Univ. of Tsukuba, 7.IHPP PAS)

3:15 PM - 3:30 PM

[22p-B204-8] Fabrication of vertical GaN p-n junction diodes using Mg diffusion

〇Yuta Ito¹, Kawasaki Seiya¹, Woong Kwon¹, Kenya Shimamura¹, Narita Shuhei¹, Watanabe Hirotaka², Deki Manato³, Nitta Shugo², Honda Yoshio², Tanaka Atsushi², Amano Hiroshi^2,3,4 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.VBL Nagoya Univ., 4.ARC Nagoya Univ.)

3:30 PM - 3:45 PM

△ [22p-B204-9] Mg Diffusion in p-GaN formed by thermal diffusion method

〇Kenya Shimamura¹, Yuta Itoh¹, Takeru Kumabe¹, Seiya Kawasaki¹, Hirotaka Watanabe², Manato Deki³, Shugo Nitta², Atsushi Tanaka², Yoshio Honda², Hiroshi Amano^2,3,4 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.VBL Nagoya Univ., 4.ARC Nagoya Univ.)

3:45 PM - 4:00 PM

[22p-B204-10] Breakdown field of GaN p⁺-n and p-n⁺ diodes with various doping concentration

〇Takuya Maeda¹, Tetsuo Narita², Shinji Yamada^3,4, Tetsu Kachi³, Tsunenobu Kimoto¹, Masahiro Horita^1,3,5, Jun Suda^1,3,5 (1.Kyoto Univ,, 2.Toyota Central R&D Labs. Inc., 3.Nagoya Univ. IMaSS, 4.ULVAC Inc., 5.Nagoya Univ.)

4:15 PM - 4:30 PM

△ [22p-B204-11] Exploration of the origin of reverse leakage current in GaN vertical p-n junction diodes grown by halide vapor phase epitaxy

〇Daiki Tanaka¹, Kazuki Ohnishi², Seiya Kawasaki¹, Shugo Nitta², Naoki Fujimoto², Hirotaka Watanabe², Atsushi Tanaka², Yoshio Honda², Hiroshi Amano^2,3,4 (1.Dept. of Electronics, Nagoya Univ., 2.IMaSS, Nagoya Univ, 3.ARC, Nagoya Univ, 4.VBL, Nagoya Univ)

4:30 PM - 4:45 PM

△ [22p-B204-12] Analysis of conductivity modulation of pn diodes fabricated on OVPE-GaN substrate

〇Shigeyoshi Usami¹, Hiroshi Ohta², Junichi Takino³, Hirotaka Watanabe⁴, Tomoaki Sumi³, Masayuki Imanishi¹, Shugo Nitta⁴, Yoshio Honda⁴, Yusuke Mori¹, Tomoyoshi Mishima², Yoshio Okayama³, Hiroshi Amano⁴ (1.Osaka Univ., 2.Hosei Univ., 3.Panasonic Holdings Corp., 4.IMaSS Nagoya Univ.)

4:45 PM - 5:00 PM

△ [22p-B204-13] 2.4 GHz Rectifier Characteristics of AlGaN/GaN HEMT Gated-Anode Diode for Microwave Wireless Power Transfer

〇Naoya Kishimoto¹, Yoichi Tuchiya¹, Debaleen Biswas¹, Qiang Ma¹, Yuji ando², Hidemasa takahashi², Akio Wakejima¹ (1.Nagoya Inst., 2.Nagoya Univ.)

5:00 PM - 5:15 PM

△ [22p-B204-14] Shockley-Read-Hall Lifetime in p-type Distributed-Polarization Doped AlGaN

〇Takeru Kumabe¹, Seiya Kawasaki¹, Hirotaka Watanabe², Manato Deki^1,3, Yoshio Honda², Hiroshi Amano^2,3,4 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.VBL Nagoya Univ., 4.ARC Nagoya Univ.)

5:15 PM - 5:30 PM

[22p-B204-15] Two-dimensional characterization of the edge structure of Ni/n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy

〇Hiroki Imabayashi¹, Fumimasa Horikiri², Yoshinobu Narita², Noboru Fukuhara², Tomoyoshi Mishima³, Kenji Shiojima¹ (1.Univ. of Fukui, 2.SCIOCS, 3.Hosei Univ.)

5:30 PM - 5:45 PM

[22p-B204-16] Normally-off β-Ga₂O₃ vertical multi-fin FET with a drain current over 2.4 A

〇Daiki Wakimoto¹, Chia-Hung Lin¹, Quang Tu Thieu¹, Hironobu Miyamoto¹, Kohei Sasaki¹, Akito Kuramata¹ (1.NCT)

5:45 PM - 6:00 PM

[22p-B204-17] Diamond Schottky barrier diode fabricated by all B ion implantation

〇Yuhei Seki¹, Seiya Shigematsu², Toshiyuki Oishi², Makoto Kasu², Yasushi Hoshino¹, Jyoji Nakata¹ (1.Kanagawa Univ., 2.Saga Univ.)

6:00 PM - 6:15 PM

[22p-B204-18] 1651V, 3.6×10⁵ On/off ratio CVD diamond SBD doped with all ion implantation

〇(M1)Yuya Irie¹, Niloy Chandra Saha¹, Yuhei Seki², Jun Nakayama¹, Kim Seongwoo³, Koji Koyama³, Toshiyuki Oishi¹, Makoto Kasu¹, Yasushi Hoshino², Joji Nakata² (1.Saga Univ., 2.Kanagawa Univ., 3.Adamant Namiki.)

Session information

[22p-B204-1~18] 13.7 Compound and power devices, process technology and characterization

△ [22p-B204-1] Suppression of a GaO_x layer at SiO₂/GaN MOS Interface by Sputter Deposition of SiO₂

[22p-B204-2] Suppression of Ga diffusion in SiO₂/GaN Structures Formed by Sputter Deposition of SiO₂

△ [22p-B204-3] Study of intermediate layer of SiO₂/GaN interface by first-principles calculation

[22p-B204-4] Investigation of high-concentration p-type GaN by shallow implantation of Mg and N

[22p-B204-5] Expansion of Optimized Dose Range for Junction Termination Extension Structure of GaN Vertical Power Devices by Utilizing Mg Channeling Implantation

[22p-B204-6] Annealing temperature dependence of hole concentration for Mg-ion-implanted GaN

[22p-B204-7] Luminescence studies of Mg-implanted p-type GaN by ultra-high-pressure annealing

[22p-B204-8] Fabrication of vertical GaN p-n junction diodes using Mg diffusion

△ [22p-B204-9] Mg Diffusion in p-GaN formed by thermal diffusion method

[22p-B204-10] Breakdown field of GaN p⁺-n and p-n⁺ diodes with various doping concentration

△ [22p-B204-11] Exploration of the origin of reverse leakage current in GaN vertical p-n junction diodes grown by halide vapor phase epitaxy

△ [22p-B204-12] Analysis of conductivity modulation of pn diodes fabricated on OVPE-GaN substrate

△ [22p-B204-13] 2.4 GHz Rectifier Characteristics of AlGaN/GaN HEMT Gated-Anode Diode for Microwave Wireless Power Transfer

△ [22p-B204-14] Shockley-Read-Hall Lifetime in p-type Distributed-Polarization Doped AlGaN

[22p-B204-15] Two-dimensional characterization of the edge structure of Ni/n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy

[22p-B204-16] Normally-off β-Ga₂O₃ vertical multi-fin FET with a drain current over 2.4 A

[22p-B204-17] Diamond Schottky barrier diode fabricated by all B ion implantation

[22p-B204-18] 1651V, 3.6×10⁵ On/off ratio CVD diamond SBD doped with all ion implantation

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Session information

[22p-B204-1~18] 13.7 Compound and power devices, process technology and characterization

△ [22p-B204-1] Suppression of a GaOx layer at SiO2/GaN MOS Interface by Sputter Deposition of SiO2

△ [22p-B204-3] Study of intermediate layer of SiO2/GaN interface by first-principles calculation

△ [22p-B204-9] Mg Diffusion in p-GaN formed by thermal diffusion method

△ [22p-B204-11] Exploration of the origin of reverse leakage current in GaN vertical p-n junction diodes grown by halide vapor phase epitaxy

△ [22p-B204-12] Analysis of conductivity modulation of pn diodes fabricated on OVPE-GaN substrate

△ [22p-B204-13] 2.4 GHz Rectifier Characteristics of AlGaN/GaN HEMT Gated-Anode Diode for Microwave Wireless Power Transfer

△ [22p-B204-14] Shockley-Read-Hall Lifetime in p-type Distributed-Polarization Doped AlGaN

Authenticate

△ [22p-B204-1] Suppression of a GaO_x layer at SiO₂/GaN MOS Interface by Sputter Deposition of SiO₂

△ [22p-B204-3] Study of intermediate layer of SiO₂/GaN interface by first-principles calculation