[22p-B204-1~18] 13.7 Compound and power devices, process technology and characterization

[22p-B204-4] Investigation of high-concentration p-type GaN by shallow implantation of Mg and N

〇Ryo Tanaka¹, Shinya Takashima¹, Masaharu Edo¹, Jun Uzuhashi², Tadakatsu Ohkubo², Jun Chen², Takashi Sekiguchi² (1.Fuji Electric, 2.NIMS)

Keywords:Gallium nitride, high p-type concentration, Ion Implantation

For practical use of vertical GaN MOSFETs, it is necessary to locally form a high concentration p-type layer for good p-type ohmic contact by Mg ion-implantation. However, there is a problem that Mg clusters are formed and the Mg concentration as an acceptor decreases when Mg is implanted 1E19cm^-3 or more. In this presentation, we investigated shallow (lower energy) Mg implantation into GaN to suppress defect formation by ion-implantation.