[22p-B204-1~18] 13.7 Compound and power devices, process technology and characterization

[22p-B204-5] Expansion of Optimized Dose Range for Junction Termination Extension Structure of GaN Vertical Power Devices by Utilizing Mg Channeling Implantation

〇Kazuki Kitagawa¹, Maciej Matys², Tetsu Kachi², Jun Suda^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

Keywords:GaN, p-n junction structure