Fabrication of vertical conduction AlGaN-based UV-B light-emitting devices by laser lift-off

Toma Nishibayashi; Tomoya Omori; Moe Shimokawa; Ayumu Yabutani; Ryota Hashegawa; Shyo Iwayama; Motoaki Iwaya; Tetuya Takeuchi; Satoshi Kamiyama; Kohei Miyoshi; Koichi Naniwae; Akihiro Yamaguchi; Hideto Miyake

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[22p-C200-1~15] 15.4 III-V-group nitride crystals

Thu. Sep 22, 2022 1:30 PM - 6:00 PM C200 (C200)

Motoaki Iwaya(Meijo Univ.), Yoshio Honda(Nagoya Univ.), Maki Kushimoto(Nagoya Univ.)

5:00 PM - 5:15 PM

△ [22p-C200-12] Fabrication of vertical conduction AlGaN-based UV-B light-emitting devices by laser lift-off

〇(M1)Toma Nishibayashi¹, Tomoya Omori¹, Moe Shimokawa¹, Ayumu Yabutani¹, Ryota Hashegawa¹, Shyo Iwayama^1,2, Motoaki Iwaya¹, Tetuya Takeuchi¹, Satoshi Kamiyama¹, Kohei Miyoshi³, Koichi Naniwae³, Akihiro Yamaguchi⁴, Hideto Miyake² (1.Meijo Univ., 2.Mie Univ., 3.Ushio Inc., 4.Seishin Trading)

Keywords:semiconductor, Process technology