Investigation of sapphire substrate separation by wet etching of AlGaN grown on AlN nanopillars

Eri Matsubara; Toma Nishibayashi; Ryota Hasegawa; Ryosuke Kondo; Yoshinori Imoto; Ryoya Yamada; Ryuichiro Sakakima; Sho Iwayama; Motoaki Iwaya; Tetsuya Takeushi; Satoshi Kamiyama; Hideto Miyake

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[22p-C200-1~15] 15.4 III-V-group nitride crystals

Thu. Sep 22, 2022 1:30 PM - 6:00 PM C200 (C200)

Motoaki Iwaya(Meijo Univ.), Yoshio Honda(Nagoya Univ.), Maki Kushimoto(Nagoya Univ.)

5:15 PM - 5:30 PM

△ [22p-C200-13] Investigation of sapphire substrate separation by wet etching of AlGaN grown on AlN nanopillars

〇(M1)Eri Matsubara¹, Toma Nishibayashi¹, Ryota Hasegawa¹, Ryosuke Kondo¹, Yoshinori Imoto¹, Ryoya Yamada¹, Ryuichiro Sakakima¹, Sho Iwayama^1,2, Motoaki Iwaya¹, Tetsuya Takeushi¹, Satoshi Kamiyama¹, Hideto Miyake² (1.Meijo Univ., 2.Mie Univ.)

Keywords:AlGaN, wet etching

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