[22p-C200-1~15] 15.4 III-V-group nitride crystals

[22p-C200-7] Effect of Mg doping in the core layer in AlGaN-based DUV LD structures

〇Yuri Itokazu^1,2, Noritoshi Maeda¹, Masafumi Jo¹, Hiroyuki Yaguchi², Hideki Hirayama¹ (1.RIKEN, 2.Saitama Univ.)

Keywords:laser diode, deep ultraviolet, AlGaN

Laser diodes (LDs) have advantages such as compact size, long lifetime, and low power consumption, and are expected to be realized in a variety of wavelength bands. The injection efficiency in DUV LD structures is low, and this trend becomes more pronounced with shorter wavelengths. Improvement of injection efficiency is essential to achieve lower threshold and shorter wavelengths. In this study, we experimentally show that the introduction of Mg doping and an electron blocking layer in the core layer significantly improves the injection efficiency, and discuss the mechanism of the improvement.