[22p-C205-1~15] CS.1 Code-sharing Session of 2.3 & 7.5

[22p-C205-6] [Young Scientist Presentation Award Speech] GCIB etching process for low damage and atomic layer control of silicon nitride film

〇Masaya Takeuchi¹, Reki Fujiwara¹, Noriaki Toyoda¹ (1.Univ. of Hyogo)

Keywords:GCIB, XPS, Atomic layer etching

Recently, photoelectron spectroscopy (XPS) measurements of liquids have become possible by using "environmental cell" to enclose the liquid sample. By decreasing the thickness of the photoelectron transmittance window to a few nm, the detection sensitivity can be improved. On the other hand, it also requires a pressure resistance of more than 1 atm to seal the solution in a vacuum. Atomic layer etching of SiNx films using GCIB, which allows for low-damage irradiation effects, aims to achieve ultra-thinning of SiNx films while maintaining their pressure resistance.