[22p-P07-1~15] 6.3 Oxide electronics

[22p-P07-12] Construction of two-AC Hall-effect measurement system with permanent magnets for evaluating electric properties of oxide semiconductors

〇Kouhei Yoshimatsu¹, Chiharu Narita¹, Hiroshi Kumigashira¹ (1.IMRAM, Tohoku Univ.)

Keywords:Hall-effect measurement, Oxide semiconductor, Lock-in detection

Hall-effect mesurement is a popular method to evaluate electric properties of materials. Recently, AC Hall-effect mesurement which can detect small Hall voltages with high sensitivity has been paid attention. In this study, we constructed an AC Hall-effect mesurement system with permanent magnets and investigated electric properties of a typical oxide semiconductor of ZnO films.