Oral presentation

[20a-B204-1~11] 6.3 Oxide electronics

Tue. Sep 20, 2022 9:00 AM - 12:00 PM B204 (B204)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

△ [20a-B204-1] First-principles calculations of shear plane structures and oxygen vacancy behavior in rutile TiO₂

〇(M2)Masaki Ninomiya¹, Tetsuya Tohei¹, Yusuke Hayashi¹, Akira Sakai¹ (1.Osaka Univ.)

9:15 AM - 9:30 AM

△ [20a-B204-2] Mechanism Elucidation of Resistance Relaxation Phenomenon in Perovskite Resistive Random Access Memory

〇Hayato Nakamura¹, Hiromasa Aoki¹, Hiroyuki Kai¹, Kentaro Kinoshita¹ (1.Tokyo Univ. of Sci.)

9:30 AM - 9:45 AM

△ [20a-B204-3] Resistive Switching of RE Oxyhydrides by Electrical Insertion and Extraction of H⁻

〇Tomoyuki Yamasaki¹, Ryosei Takaoka², Soshi Iimura^1,3, Junghwan Kim¹, Hidenori Hiramatsu², Hideo Hosono^1,3 (1.Tokyo Tech. MCES, 2.Tokyo Tech. MSL, 3.NIMS)

9:45 AM - 10:00 AM

△ [20a-B204-4] Ion-Gating Reservoir for High Performance Reservoir Computing

〇(D)Daiki Nishioka^1,2, Takashi Tsuchiya^1,2, Wataru Namiki¹, Makoto Takayanagi^1,2, Masataka Imura¹, Yasuo Koide¹, Tohru Higuchi², Kazuya Terabe¹ (1.NIMS, 2.TUS)

10:00 AM - 10:15 AM

△ [20a-B204-5] Redox-Based Ion-Gating Reservoir Using Lithium Solid Electrolyte

〇Tomoki Wada^1,2, Daiki Nishioka^1,2, Wataru Namiki¹, Takashi Tsuchiya^1,2, Tohru Higuchi², Kazuya Terabe¹ (1.NIMS, 2.TUS)

10:30 AM - 10:45 AM

[20a-B204-6] Hydrogen gas sensing properties of SnO₂ thin films loaded with Pt-nanoparticles

Syuhei Nisikawa¹, Makoto Kashiwagi¹, Junjun Jia², Yuki Oguti¹, Akira Nakamura³, 〇Yuzo Shigesato¹ (1.AGU, 2.Waseda Univ., 3.MinebeaMitsumi Inc.)

10:45 AM - 11:00 AM

△ [20a-B204-7] Sputtering deposition conditions and gas sensing properties of SnO2

〇Keita Ohdachi¹, Makoto Kashiwagi¹, Yuki Oguchi¹, Akira Nakamura², Haruka Yamamoto³, Yuzo Shigesato¹ (1.AGU, 2.MinebeaMitsumi Inc., 3.JEOL Ltd.)

11:00 AM - 11:15 AM

△ [20a-B204-8] Hydrogen gas sensing using oxide semiconductor films (3)
Gas sensing by Al: ZnO films loaded with Pt or Pd nanoparticles

〇Masayuki Endo¹, Hiroki Sone¹, Makoto Kashiwagi¹, Junjun Jia², Yuki Oguchi¹, Akira Nakamura³, Yuzo Shigesato¹ (1.AGU, 2.Waseda Univ., 3.MinebeaMitsumi Inc.)

11:15 AM - 11:30 AM

△ [20a-B204-9] Growth and Characterization of α-Fe₂O₃ Photoelectrode via Mist Chemical Vapor Deposition

〇(DC)Kazuki Shimazoe¹, Hiroyuki Nishinaka¹, Yoko Taniguchi¹, Kazutaka Kanegae¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. Tech.)

11:30 AM - 11:45 AM

△ [20a-B204-10] Polyethylene Glycol Doping Effects on Photocatalytic Activity of Anatase/Rutile-Mixed Phase TiO₂ Nanoparticles

〇(M1)Takumi Matsumoto¹, Retsuo Kawakami¹, Shin-ichiro Yanagiya^1,2, Masahito Niibe³, Yoshitaka Nakano⁴, Takashi Mukai⁵ (1.Tokushima Univ., 2.pLED, Tokushima Univ., 3.Hyogo Univ., 4.Chubu Univ., 5.Nichia Corp.)

11:45 AM - 12:00 PM

△ [20a-B204-11] Annealing Treatment on Tungsten Oxide Deposited by Sputtering

〇(M1)Tetsunori Katsura¹, Keisuke Washo¹, Kyung Ho Kim¹, Yoshio Abe¹ (1.Kitami Inst. Technol.)

Oral presentation

[20p-B204-1~13] 6.3 Oxide electronics

Tue. Sep 20, 2022 1:30 PM - 5:00 PM B204 (B204)

Teruo Kanki(Osaka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

△ [20p-B204-1] Li-content control of superconducting Li_1-xNbO₂ films by solution treatments

〇(M2)Aya Sato¹, Takuto Soma¹, Hiroshi Kumigashira^2,3, Akira Ohtomo¹ (1.Tokyo Tech., Dept. Chem. Sci. Eng., 2.KEK-IMSS, 3.Tohoku Univ., IMRAM)

1:45 PM - 2:00 PM

△ [20p-B204-2] Superconductivity in pseudo-rocksalt structure Nb₃O₃ epitaxial thin films

〇(M1)Rintaro Kimura¹, Yasumichi Cho¹, Kenichi Kaminaga¹, Shingo Maruyama¹, Yuji Matsumoto¹ (1.Tohoku Grad. Sch.)

2:00 PM - 2:15 PM

△ [20p-B204-3] Fabrication of High-Quality Sr₃Ru₂O₇ Thin Films by Molecular Beam Epitaxy

〇(M1)Ren Ooshiro¹, Shinichi Nishihaya¹, Takahiro Fujita², Masashi Kawasaki^2,3, Masaki Uchida¹ (1.Tokyo Tech, 2.The Univ. of Tokyo, 3.Riken CEMS)

2:15 PM - 2:30 PM

▼ [20p-B204-4] Deep-UV transparent conducting SrSnO₃ freestanding sheet using Al₂O₃ protection layer

〇(D)Lizhikun Gong¹, Mian Wei¹, Rui Yu¹, Hiromichi Ohta², Katayama Tsukasa^2,3 (1.IST, Hokkaido Univ., 2.RIES, Hokkaido Univ., 3.JST-PRESTO)

2:30 PM - 2:45 PM

△ [20p-B204-5] Fabrication and transport properties of SrFeO₃/LaNiO₃ heterostructures with polar interfaces

〇(M1)Yuki Honda¹, Takuto Soma¹, Akira Ohtomo¹ (1.Tokyo Inst.)

2:45 PM - 3:00 PM

△ [20p-B204-6] Fabrication of GdMnO₃/LaNiO₃ superlattice structure by pulse-laser deposition

〇yuta yamagishi¹, sahoo ramchandra¹, soma takuto¹, ohtomo akira¹ (1.Tokyo Tech.)

3:15 PM - 3:30 PM

[20p-B204-7] Metal-insulator transition of Ti₂O₃ predicted by density functional theory

〇Kouhei Yoshimatsu¹, Naoto Hasegawa¹, Hiroshi Kumigashira¹ (1.IMRAM, Tohoku Univ.)

3:30 PM - 3:45 PM

△ [20p-B204-8] Fermi surface of Ti₂O₃ films determined by angle-resolved photoemission spectroscopy

〇(D)Naoto Hasegawa¹, Kohei Yoshimatsu¹, Daisuke Shiga¹, Tatsuhiko Kanda¹, Satoru Miyazaki¹, Miho Kitamura², Koji Horiba², Hiroshi Kumigashira^1,2 (1.IMRAM, Tohoku Univ., 2.IMSS, KEK)

3:45 PM - 4:00 PM

▼ [20p-B204-9] AMoO₂ (A = Li, Na, K): Two-dimensional Mott insulators with tunable MoO₂ interlayer distance

〇(D)Shuxin Zhang¹, Takuto Soma¹, Akira Ohtomo¹ (1.Tokyo Tech.)

4:00 PM - 4:15 PM

△ [20p-B204-10] Fabrication of Pr₂Ir₂O₇thin film by MBE and solid phase epitaxy

〇(M1)Shunji Oishi¹, Seiya Yokokura², Toshihiro Shimada², Taro Nagahama² (1.CSE, Hokkaido Univ., 2.Eng., Hokudai Univ .)

4:15 PM - 4:30 PM

△ [20p-B204-11] Fabrication of single oriented VO₂ thin films via topotactic oxidation

〇Hisato Nishii¹, Yuya Matamura¹, Takumi Ikenoue¹, Masao Miyake¹, Tetsuji Hirato¹ (1.Kyoto Univ.)

4:30 PM - 4:45 PM

△ [20p-B204-12] Topochemical reductive epitaxy of V_xO_y thin films by uniaxial compressive annealing

〇Hiroki Shoji¹, Reo Kato¹, Kenta Kaneko¹, Satoru Kaneko^2,1, Mamoru Yoshimoto¹, Akifumi Matsuda¹ (1.Tokyo Tech, 2.KISTEC)

4:45 PM - 5:00 PM

△ [20p-B204-13] Phase transition of epitaxial cobalt oxide films by vacuum ultraviolet light irradiation

〇Kenta Kaneko¹, Hiroki Shoji¹, Yuchi Qiao¹, Tomoaki Oga¹, Satoru Kaneko^2,1, Mamoru Yoshimoto¹, Akifumi Matsuda¹ (1.Tokyo Tech, 2.KISTEC)

Oral presentation

[21a-B204-1~10] 6.3 Oxide electronics

Wed. Sep 21, 2022 9:00 AM - 11:45 AM B204 (B204)

Sanggyu Koh(東理大)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[21a-B204-1] Huge Resistance Modulation of NdNiO₃ Field Effect Transistors and Its Size Effect

〇(M2)Ryota Koizumi¹, Azusa Hattori¹, Haobo Li¹, Hidekazu Tanaka¹ (1.SANKEN, Osaka Univ.)

9:15 AM - 9:30 AM

[21a-B204-2] Evaluation of gate voltage response of H_xWO_3-δ films by using Nanogap-IL-FET

〇Masaki Ise¹, Hiroyuki Kai¹, Kentaro Kinoshita¹ (1.Tokyo Univ. of Sci.)

9:30 AM - 9:45 AM

[21a-B204-3] Evaluation of memory effect of ReRAM using proton doped EuNiO₃ thin film

〇Yuki Taniguchi¹, Haobo Li¹, Azusa N Hattori¹, Hidekazu Tanaka¹ (1.SANKEN, Osaka Univ)

9:45 AM - 10:00 AM

▲ [21a-B204-4] Ultra-sharp conductance change with proton potential in WO₃ heterostructure

〇SatyaPrakash Pati¹, Satoshi Hamasuna¹, Takeaki Yajima¹ (1.Kyushu Univ.)

10:00 AM - 10:15 AM

[21a-B204-5] Anomalous durability of (001) plane against oxygen vacancy injection at electrode/rutile-TiO₂ interfaces

〇Taku Suzuki¹, Isao Sakaguchi¹ (1.NIMS)

10:30 AM - 10:45 AM

[21a-B204-6] Carrier Density and Neuromorphic Forgetting Properties of Pt/Ti_0.99Sc_0.01O_2-δ/Pt multilayer

〇(M2)Mitsuki Taniguchi¹, Tomoasa Takada¹, Kisara Tomiyoshi¹, Kaito Yako¹, Airi Maekawa¹, Daisuke Shiga², Hiroshi Kumigashira², Tohru Higuchi¹ (1.Tokyo Univ. Sci., 2.Tohoku Univ.)

10:45 AM - 11:00 AM

[21a-B204-7] Brain-type characteristic of Schottky barrier-controlled Pt/Ti_0.99Fe_0.01O_2-δ /Pt device

〇Kisara Tomiyoshi¹, Mitsuki Taniguchi¹, Tomoasa Takada¹, Kaito Yako¹, Tohru Higuchi¹, Daisuke Shiga², Hiroshi Kumigashira² (1.Tokyo Univ. Sci., 2.Tohoku Univ)

11:00 AM - 11:15 AM

[21a-B204-8] Resistance change behavior under voltage sweep of Au/MgOx/Au/Ti-ReRAM

〇Koki Kimura¹, Tomohiro Shimizu¹, Takeshi Ito¹, Shoso Shingubara¹ (1.Kansai Univ.)

11:15 AM - 11:30 AM

[21a-B204-9] Effect of resistance change in RESET process of ReRAM device from DC pulse OFF time

〇Chuanyang Huang¹, Masakazu Tanaka¹, Shinchi Okayasu¹, Tomohiro Shimizu¹, Takeshi Ito¹, Shoso Shingubara¹ (1.Kansai Univ.)

11:30 AM - 11:45 AM

[21a-B204-10] Fabrication of Ni(OH)₂/NiO heterodiodes by electrochemical deposition

〇Masahide Shimura¹, Koji Abe¹ (1.Nagoya Institute of Technology)

Oral presentation

[21p-B204-1~17] 6.3 Oxide electronics

Wed. Sep 21, 2022 1:30 PM - 6:00 PM B204 (B204)

Yumiko Katayama(Univ. of Tokyo), Daisuke Shiga(Tohoku Univ)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[21p-B204-1] Enhanced THz electric field by nonlinear conductivity due to phase-separation of VO₂ micro wire on Si substrate

〇Ai Osaka¹, Masaya Nagai², Shingo Genchi¹, Hui Ren¹, Hidekazu Tanaka¹, Azusa N. Hattori¹ (1.SANKEN, Osaka Univ., 2.Graduate School of Engineering Science, Osaka Univ.)

1:45 PM - 2:00 PM

[21p-B204-2] Mist CVD growth of VO₂ thin films on m-plane sapphire substrates method and structural transition

〇(M1)Kazuki Ushioda¹, Naoki Matsuura¹, Osamu Kubo¹, Hiroshi Tabata¹, Mitsuhiro Katayama¹ (1.Grad. Sch. Eng)

2:00 PM - 2:15 PM

[21p-B204-3] Photoemission Study of Electronic Structures in Epitaxial Cr_xV_1-xO₂ Films

〇Daisuke Shiga^1,2, Xianglin Cheng¹, Taehyun Kim¹, Tatsuhiko Kanda¹, Naoto Hasegawa¹, Miho Kitamura², Kohei Yoshimatsu¹, Hiroshi Kumigashira^1,2 (1.IMRAM, Tohoku Univ., 2.IMSS, KEK)

2:15 PM - 2:30 PM

[21p-B204-4] Perovskite/Si Tandem Solar Cells Using Hard X-ray Photoelectron Spectroscopy Angle-resolved evaluation of ALD-TiO₂ layers for application

〇Masataka Asami¹, Yoshiharu Kirihara¹, Daisuke Ieki^2,1, Akira Yasui³, Ryousuke Ishikawa^1,2, Hiroshi Nohira¹ (1.Tokyo City Univ, 2.Adv.Res.Lab.,Tokyo City Univ, 3.JASRI)

2:30 PM - 2:45 PM

[21p-B204-5] Superconducting Dome and Magnetic Quantum Critical Behaviors in Two-dimensional NbO₂ Layers

〇Takuto Soma¹, Kohei Yoshimatsu¹, Akira Ohtomo¹ (1.Tokyo Tech., Dept. Chem. Sci. Eng.)

2:45 PM - 3:00 PM

[21p-B204-6] Heavy rare-earth monoxides DyO and ErO thin films as ferromagnetic semiconductors

〇Satoshi Sasaki¹, Daichi Oka¹, Daichi Saito¹, Hirokazu Shimizu¹, Tomoteru Fukumura^1,2,3 (1.Tohoku Univ., 2.Tohoku Univ. WPI-AIMR&CRC, 3.Tohoku Univ. CSIS-CSRN)

3:00 PM - 3:15 PM

[21p-B204-7] Thin Film Growth of Crystal-Field Narrow-Gap Semiconductor Pd Oxides

〇Yusuke Kozuka¹, Jun Fujioka², Taisuke Sasaki¹, Terumasa Tadano¹ (1.NIMS, 2.Univ. Tsukuba)

3:15 PM - 3:30 PM

[21p-B204-8] Local electronic properties on N-type β-Ga₂O₃ crystals in contact with Multilayer electrode film by micro-Raman spectroscopy at high temperature

〇Ryoya Kakamu¹, Jun Suda¹ (1.Chukyo Univ.)

3:45 PM - 4:00 PM

[21p-B204-9] Electric and Magneto-Conduction Properties of La_1-xSr_xMnO₃ Thin Films produced by Metal Organic Decomposition (MOD) Method

〇Sara Kawaguchi¹ (1.Konan Univ.)

4:00 PM - 4:15 PM

[21p-B204-10] Magnetization of compositionally-graded Ru-substituted LSMO epitaxial thin films

〇(M1)Gaku Sato¹, Kennichi Kaminaga¹, Hiroshi Naganuma², Shingo Maruyama¹, Yuji Matsumoto¹ (1.Tohoku Univ., 2.Tohoku CSIS)

4:15 PM - 4:30 PM

▲ [21p-B204-11] Tunable exchange bias effect in manganese- and nickel-based artificial perovskite superlattice structures

〇(PC)Ramchandra Sahoo¹, R Nanno¹, Y Yamagishi¹, Takuto Soma¹, Akira Ohtomo¹ (1.Tokyo Tech., Dept. Chem. Sci. Eng.)

4:30 PM - 4:45 PM

[21p-B204-12] Bayesian optimization with experimental failure for high-throughput materials growth

〇Yuuki Wakabayashi¹, Takuma Otsuka², Yoshiharu Krockenberger¹, Hiroshi Sawada², Yoshitaka Taniyasu¹, Hideki Yamamoto¹ (1.NTT BRL, 2.NTT CS lab)

4:45 PM - 5:00 PM

[21p-B204-13] Isotropic orbital magnetic moments in magnetically anisotropic SrRuO₃films

〇Yuuki Wakabayashi¹, Masaki Kobayashi², Yukiharu Takeda³, Miho Kitamura⁴, Takahito Takeda², Ryo Okano², Yoshiharu Krockenberger¹, Yoshitaka Taniyasu¹, Hideki Yamamoto¹ (1.NTT BRL, 2.The Univ. of Tokyo, 3.JAEA, 4.KEK)

5:00 PM - 5:15 PM

[21p-B204-14] Transport properties of SrTaO₃ epitaxial thin film

〇Yumiko Katayama¹, Hikaru Okuma¹, Fukunobu Kadowaki¹, Yuki Tokumoto², Kazunori Ueno¹ (1.GSAS, UTokyo, 2.IIS, UTokyo)

5:15 PM - 5:30 PM

▲ [21p-B204-15] Annealing effect on electrical conductivity in Sr₃Cr₂O₇ epitaxial thin films

〇(M2)Zhaochen MA¹, Daichi Oka¹, Tomoteru Fukumura¹ (1.Tohoku Univ.)

5:30 PM - 5:45 PM

[21p-B204-16] Electrochemical Redox Treatment and Heat-Electron Transport Properties of SrCoO_x-SrFeO_x Solid Solution Films

〇(D)Zhiping Bian¹, Qian Yang², Mitsuki Yoshimura³, Hai Jun Cho⁴, Hiromichi Ohta⁴ (1.IST-Hokudai, 2.Jiangsu Univ., 3.Eng.-Hokudai, 4.RIES-Hokudai)

5:45 PM - 6:00 PM

[21p-B204-17] Physical vapor deposition of perovskite oxide multilayers on self-oriented LaNiO₃ films

〇Rintaro Ashihara¹, Masami Kawahara², Takeshi Kawae¹ (1.College of Sci. & Eng. Kanazawa Univ., 2.Kojundo Chemical Lab. Co., ltd.)

Oral presentation

[22a-A401-1~6] 6.3 Oxide electronics

Thu. Sep 22, 2022 10:00 AM - 11:30 AM A401 (A401)

Tohru Higuchi(Tokyo Univ. of Sci.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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10:00 AM - 10:15 AM

[22a-A401-1] Contribution of solution to electrochemical metal-to-insulator transition in YO_xH_y thin films

〇Yuya Komatsu¹, Ryota Shimizu¹, Markus Wilde², Kazunori Nishio¹, Katsuyuki Fukutani^2,3, Taro Hitosugi^1,4 (1.Tokyo Tech., 2.IIS Univ. Tokyo, 3.JAEA, 4.Dept. of Chem. Univ. Tokyo)

10:15 AM - 10:30 AM

[22a-A401-2] THz conductivity measurement of barium zirconate with proton-hole co-conductivity

〇Ryosuke Imamura¹, Masaya Nagai¹, Hikaru Takehara¹, Masaaki Ashida¹, Yuji Okuyama², Yukimune Kani³ (1.Osaka Univ., 2.Miyazaki Univ., 3.Panasonic holdings)

10:30 AM - 10:45 AM

[22a-A401-3] Improvement of cycle performance of amorphous TF-LIBs by Si protection layer

〇Natsuki Matsuda¹, Kenta Tsuji¹, Isaku Kanno¹ (1.Kobe Univ.)

10:45 AM - 11:00 AM

[22a-A401-4] Investigation of Li-ion batteries using Cu as a cathode current collector

〇Iwao Kawayama¹, Yuki Ishida¹, Kentaro Koide¹, Mizuki Shima¹, Riki Kataoka², Mitsunori Kitta², Yasushi Maeda², Toshiya Doi¹ (1.Kyoto Univ., 2.AIST)

11:00 AM - 11:15 AM

[22a-A401-5] Electronic structure of solid electrolytes Li_xLa_(1-x)/3NbO₃ bulk single crystal studied by angle-resolved photoemission spectroscopy

〇Takahiro Ito^1,2, Ryo Yamamoto², Shotaro Koyama², Masashi Nakatake³, Shoichi Takakura³, Shin-ichiro Ideta⁴, Kiyohisa Tanaka⁴, Yasuyuki Fujiwara⁵, Hiroki Moriwake⁶, Yasuyoshi Iriyama² (1.NUSR, 2.Nagoya Univ., 3.AichiSR, 4.IMS/UVSOR, 5.Shinshu Univ., 6.JFCC)

11:15 AM - 11:30 AM

[22a-A401-6] Visualization of Na⁺Diffusion in thin film of cobalt Prussian blue analogue

〇(DC)Hiroki Iwaizumi¹, Takayuki Shibata², Yutaka Moritomo^1,3,4 (1.Grad. Sch. Pure and Appl. Sci., Univ. Tsukuba, 2.Fac. Marine Tech., Tokyo Univ. Marine Sci and Tech, 3.Fac. Pure and Appl. Sci., Univ. Tsukuba, 4.TREMS, Univ. Tsukuba)

Poster presentation

[22p-P07-1~15] 6.3 Oxide electronics

Thu. Sep 22, 2022 1:30 PM - 3:30 PM P07 (Arena)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 3:30 PM

[22p-P07-1] Preparation and characterization of VO₂ film by oxygen partial pressure control and residual carbon in the film

〇Tomonori Yamada¹, Masahiro Tahashi¹, Makoto Takahashi¹, Hideo Goto¹ (1.Chubu Univ.)

1:30 PM - 3:30 PM

[22p-P07-2] Electronic structure and carrier density of semiconductor-insulator transition of VO₂ thin films deposited on Nb-TiO₂/Al₂O₃

Kaito Yako¹, Shohei Nishi^1,2, Hiroki Ito¹, Mitsuki Taniguchi¹, Kisara Tomiyoshi¹, Tomoasa Takada¹, Daisuke Shiga², Hiroshi Kumigashira², 〇Tohru Higuchi¹ (1.Tokyo Univ. Sci., 2.Tohoku Univ.)

1:30 PM - 3:30 PM

[22p-P07-3] ARPES study on quantum well states of SrTi_1–xV_xO₃ quantum well structures

〇(DC)Tatsuhiko Kanda¹, Daisuke Shiga¹, Asato Wada¹, Naoto Hasegawa¹, Xianglin Cheng¹, Taehyun Kim¹, Ryotaro Hayasaka¹, Miho Kitamura², Kohei Yoshimatsu¹, Hiroshi Kumigashira^1,2 (1.IMRAM, Tohoku Univ., 2.IMSS KEK)

1:30 PM - 3:30 PM

[22p-P07-4] Effects of irradiation laser on the growth process of YbFe₂O₄ multiferroic thin films

〇(D)Kento Shimamoto¹, Yuki Igarashi¹, Takumi Hayama¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Met. Univ.)

1:30 PM - 3:30 PM

[22p-P07-5] Resistance variation mechanism and neuromorphic function enhancement of Pt/Ti_0.96Co_0.04O_2-δ/Pt thin films

〇(M2)Tomoasa Takada¹, Yu Yamaguchi¹, Mitsuki Taniguchi¹, Kisara Tomiyoshi¹, Kaito Yako¹, Riku Kaneko¹, Daisuke Shiga², Hiroshi Kumigashira², Tohru Higuchi¹ (1.Tokyo Univ. Sci., 2.Tohoku Univ.)

1:30 PM - 3:30 PM

[22p-P07-6] Fabrication of self-powered CO₂ gas sensor based on a NiO thin films

Hamada Tomohiro¹, 〇Keito Okubo¹, Mutsumi Sugiyama^1,2 (1.Tokyo Univ. Sci., 2.RIST)

1:30 PM - 3:30 PM

[22p-P07-7] Effect of photoelectric conversion material structure on photocharge/discharge characteristics in photo-rechargeable battery

〇Yutaro Nagabuchi¹, Tomoki Ikari¹, Yuji Horie¹, Teruaki Nomiyama¹ (1.Kagoshima Univ.)

1:30 PM - 3:30 PM

[22p-P07-8] Hematite with oxygen defect: enhancement of photocatalytic performance

〇(B)Ryoga Fujita¹, Masanori Sakamoto¹ (1.Niihama KOSEN)

1:30 PM - 3:30 PM

[22p-P07-9] Photocatalytic effect of up-conversion phosphor MoVO_x

〇(B)Tomoya Nishida¹, Shin-ichi Yamamoto¹ (1.Ryukoku Univ.)

1:30 PM - 3:30 PM

[22p-P07-10] Preparation of a pellet of porous titania with a thin layer of conductive oxide FTO by thermal CVD and its application to a photorechargeable battery

〇(M2)Naoki Kitayama¹, Yuta Kitazawa¹, Teruaki Nomiyama¹, Yuji Horie¹, Chitose Mihara² (1.Kagoshima Univ., 2.Joyson Safety Systems Japan K. K.)

1:30 PM - 3:30 PM

[22p-P07-11] Enhancement of Ionic Conductivity Caused by Changes in Crystal Structure of Na₃OBr

Hiroaki Asakawa¹, 〇Yuki Osaki¹, Wei Shi¹, Mariko Murayama^1,2, Zhao Xinwei¹ (1.Tokyo Univ. Sci, 2.Industrial Technology Inst.)

1:30 PM - 3:30 PM

[22p-P07-12] Construction of two-AC Hall-effect measurement system with permanent magnets for evaluating electric properties of oxide semiconductors

〇Kouhei Yoshimatsu¹, Chiharu Narita¹, Hiroshi Kumigashira¹ (1.IMRAM, Tohoku Univ.)

1:30 PM - 3:30 PM

[22p-P07-13] Synchrotron-radiation ARPES study on electronic states of SrVO₃/LaAlO₃/SrVO₃ double quantum well structures

〇(M2)Asato Wada¹, Tatsuhiko Kanda¹, Daisuke Shiga¹, Xianglin Cheng¹, Taehyun Kim¹, Miho Kitamura², Kohei Yoshimatsu¹, Hiroshi Kumigashira^1,2 (1.IMRAM, Tohoku Univ., 2.IMSS KEK)

1:30 PM - 3:30 PM

[22p-P07-14] Reduction of Sheet Resistance and Improvement of Radiation Efficiency by Annealing treatment of ITO Conductive Film for Transparent Antenna

〇Yuri Yamada¹, Fukuro Koshiji¹, Yoji Yasuda¹, Katsumi Yamada¹, Takayuki Uchida¹ (1.Tokyo Polytechnic Univ.)

1:30 PM - 3:30 PM

[22p-P07-15] Magnetic layer thickness and annealing temperature dependence of magnetic anisotropy in MgO/CoFeB/IrO2 trilayers

〇(M1)Ryoya Okimoto¹, Kohei Ueda^1,2, Takanori Kida³, Masayuki Hagiwara³, Jobu Matsuno^1,2 (1.Osaka Univ., 2.CSRN, 3.AHMF)

Oral presentation

[23a-A401-1~6] 6.3 Oxide electronics

Fri. Sep 23, 2022 10:00 AM - 11:30 AM A401 (A401)

Yuzo Shigesato(Aoyama Gakuin Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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10:00 AM - 10:15 AM

[23a-A401-1] Improvement of CO₂ Gas Sensitivity by Crystal Phase Transition of In₂O₃ TFT

〇(M1)Ayumu Nodera¹, Shun Mori¹, Hiroki Nagai¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

10:15 AM - 10:30 AM

[23a-A401-2] Heterojunction formation and oxidation/reduction surface control inside a single tungsten trioxide nanorod

〇(M1)Ryota Uchida¹, Kosei Ito¹, Kei Noda¹ (1.Keio Univ)

10:30 AM - 10:45 AM

[23a-A401-3] Improvement of Photocatalytic Performance and Evaluation of Physical Properties of NaOH-Treated Graphitic Carbon Nitride

〇Yuhei Kurita¹, Naoki Ohtani¹ (1.Doshisha Univ.)

10:45 AM - 11:00 AM

[23a-A401-4] Atomic layer deposition of ZnO thin films using a novel liquid precursor, Zn(Cp^pm)₂.

〇Fumikazu Mizutani¹, Makoto Mizui¹, Nobutaka Takahashi¹, Mari Inoue², Toshihide Nabatame² (1.Kojundo Chem. Lab., 2.NIMS)

11:00 AM - 11:15 AM

[23a-A401-5] Preparation of Gallium Oxide Thin Films by Electrostatic Spray Method

〇(M1)Takuya Shibahara¹, Li ChenYiZhan¹, Ohtani Naoki¹ (1.Doshisha Univ.)

11:15 AM - 11:30 AM

[23a-A401-6] Study of water lift-off process for BHF treated SrTiO₃ substrates

〇Ryosuke Kajitani¹, Takeshi Kawae¹ (1.College of Sci. and Eng., Kanazawa Univ.)

Sessions

6 Thin Films and Surfaces » 6.3 Oxide electronics

[20a-B204-1~11] 6.3 Oxide electronics

△ [20a-B204-1] First-principles calculations of shear plane structures and oxygen vacancy behavior in rutile TiO2

△ [20a-B204-2] Mechanism Elucidation of Resistance Relaxation Phenomenon in Perovskite Resistive Random Access Memory

△ [20a-B204-3] Resistive Switching of RE Oxyhydrides by Electrical Insertion and Extraction of H−

△ [20a-B204-4] Ion-Gating Reservoir for High Performance Reservoir Computing

△ [20a-B204-5] Redox-Based Ion-Gating Reservoir Using Lithium Solid Electrolyte

△ [20a-B204-7] Sputtering deposition conditions and gas sensing properties of SnO2

△ [20a-B204-8] Hydrogen gas sensing using oxide semiconductor films (3)Gas sensing by Al: ZnO films loaded with Pt or Pd nanoparticles

△ [20a-B204-9] Growth and Characterization of α-Fe2O3 Photoelectrode via Mist Chemical Vapor Deposition

△ [20a-B204-10] Polyethylene Glycol Doping Effects on Photocatalytic Activity of Anatase/Rutile-Mixed Phase TiO2 Nanoparticles

△ [20a-B204-11] Annealing Treatment on Tungsten Oxide Deposited by Sputtering

[20p-B204-1~13] 6.3 Oxide electronics

△ [20p-B204-1] Li-content control of superconducting Li1-xNbO2 films by solution treatments

△ [20p-B204-2] Superconductivity in pseudo-rocksalt structure Nb3O3 epitaxial thin films

△ [20p-B204-3] Fabrication of High-Quality Sr3Ru2O7 Thin Films by Molecular Beam Epitaxy

▼ [20p-B204-4] Deep-UV transparent conducting SrSnO3 freestanding sheet using Al2O3 protection layer

△ [20p-B204-5] Fabrication and transport properties of SrFeO3/LaNiO3 heterostructures with polar interfaces

△ [20p-B204-6] Fabrication of GdMnO3/LaNiO3 superlattice structure by pulse-laser deposition

△ [20p-B204-8] Fermi surface of Ti2O3 films determined by angle-resolved photoemission spectroscopy

▼ [20p-B204-9] AMoO2 (A = Li, Na, K): Two-dimensional Mott insulators with tunable MoO2 interlayer distance

△ [20p-B204-10] Fabrication of Pr2Ir2O7 thin film by MBE and solid phase epitaxy

△ [20p-B204-11] Fabrication of single oriented VO2 thin films via topotactic oxidation

△ [20p-B204-12] Topochemical reductive epitaxy of VxOy thin films by uniaxial compressive annealing

△ [20p-B204-13] Phase transition of epitaxial cobalt oxide films by vacuum ultraviolet light irradiation

[21a-B204-1~10] 6.3 Oxide electronics

▲ [21a-B204-4] Ultra-sharp conductance change with proton potential in WO3 heterostructure

[21p-B204-1~17] 6.3 Oxide electronics

▲ [21p-B204-11] Tunable exchange bias effect in manganese- and nickel-based artificial perovskite superlattice structures

▲ [21p-B204-15] Annealing effect on electrical conductivity in Sr3Cr2O7 epitaxial thin films

[22a-A401-1~6] 6.3 Oxide electronics

[22p-P07-1~15] 6.3 Oxide electronics

[23a-A401-1~6] 6.3 Oxide electronics

Authenticate

△ [20a-B204-1] First-principles calculations of shear plane structures and oxygen vacancy behavior in rutile TiO₂

△ [20a-B204-3] Resistive Switching of RE Oxyhydrides by Electrical Insertion and Extraction of H⁻

△ [20a-B204-8] Hydrogen gas sensing using oxide semiconductor films (3)
Gas sensing by Al: ZnO films loaded with Pt or Pd nanoparticles

△ [20a-B204-9] Growth and Characterization of α-Fe₂O₃ Photoelectrode via Mist Chemical Vapor Deposition

△ [20a-B204-10] Polyethylene Glycol Doping Effects on Photocatalytic Activity of Anatase/Rutile-Mixed Phase TiO₂ Nanoparticles

△ [20p-B204-1] Li-content control of superconducting Li_1-xNbO₂ films by solution treatments

△ [20p-B204-2] Superconductivity in pseudo-rocksalt structure Nb₃O₃ epitaxial thin films

△ [20p-B204-3] Fabrication of High-Quality Sr₃Ru₂O₇ Thin Films by Molecular Beam Epitaxy

▼ [20p-B204-4] Deep-UV transparent conducting SrSnO₃ freestanding sheet using Al₂O₃ protection layer

△ [20p-B204-5] Fabrication and transport properties of SrFeO₃/LaNiO₃ heterostructures with polar interfaces

△ [20p-B204-6] Fabrication of GdMnO₃/LaNiO₃ superlattice structure by pulse-laser deposition

△ [20p-B204-8] Fermi surface of Ti₂O₃ films determined by angle-resolved photoemission spectroscopy

▼ [20p-B204-9] AMoO₂ (A = Li, Na, K): Two-dimensional Mott insulators with tunable MoO₂ interlayer distance

△ [20p-B204-10] Fabrication of Pr₂Ir₂O₇thin film by MBE and solid phase epitaxy

△ [20p-B204-11] Fabrication of single oriented VO₂ thin films via topotactic oxidation

△ [20p-B204-12] Topochemical reductive epitaxy of V_xO_y thin films by uniaxial compressive annealing

▲ [21a-B204-4] Ultra-sharp conductance change with proton potential in WO₃ heterostructure

▲ [21p-B204-15] Annealing effect on electrical conductivity in Sr₃Cr₂O₇ epitaxial thin films