[22p-P07-1~15] 6.3 Oxide electronics

[22p-P07-2] Electronic structure and carrier density of semiconductor-insulator transition of VO₂ thin films deposited on Nb-TiO₂/Al₂O₃

Kaito Yako¹, Shohei Nishi^1,2, Hiroki Ito¹, Mitsuki Taniguchi¹, Kisara Tomiyoshi¹, Tomoasa Takada¹, Daisuke Shiga², Hiroshi Kumigashira², 〇Tohru Higuchi¹ (1.Tokyo Univ. Sci., 2.Tohoku Univ.)

Keywords:VO2/Nb-TiO2 multilayer, Semiconductor-insulator transition, Hall mobility

VO₂ single crystal exhibits metal-insulator transition (MIT) at ~340K. However, the VO₂ thin film does not exhibit the MIT like the single crystal due to lattice mismatch and formation of oxygen vacancies. In this study, we prepared the VO₂ thin film with Nb-TiO₂ buffer layer and probed its electrical resistivity, carrier density and Hall mobility at around MIT. In this presentation, we present the details of the crystal structure and electronic structure and discuss its transition mechanism.