The 83rd JSAP Autumn Meeting 2022

Presentation information

Poster presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[22p-P07-1~15] 6.3 Oxide electronics

Thu. Sep 22, 2022 1:30 PM - 3:30 PM P07 (Arena)

1:30 PM - 3:30 PM

[22p-P07-2] Electronic structure and carrier density of semiconductor-insulator transition of VO2 thin films deposited on Nb-TiO2/Al2O3

Kaito Yako1, Shohei Nishi1,2, Hiroki Ito1, Mitsuki Taniguchi1, Kisara Tomiyoshi1, Tomoasa Takada1, Daisuke Shiga2, Hiroshi Kumigashira2, 〇Tohru Higuchi1 (1.Tokyo Univ. Sci., 2.Tohoku Univ.)

Keywords:VO2/Nb-TiO2 multilayer, Semiconductor-insulator transition, Hall mobility

VO2 single crystal exhibits metal-insulator transition (MIT) at ~340K. However, the VO2 thin film does not exhibit the MIT like the single crystal due to lattice mismatch and formation of oxygen vacancies. In this study, we prepared the VO2 thin film with Nb-TiO2 buffer layer and probed its electrical resistivity, carrier density and Hall mobility at around MIT. In this presentation, we present the details of the crystal structure and electronic structure and discuss its transition mechanism.