[22p-P10-1~6] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[22p-P10-4] Metamorphic growth of InAs on GaAs (111)A: Growth temperature dependence

〇Takaaki Mano¹, Akihiro Ohtake¹, Takuya Kawazu¹, Sakuma Yoshiki¹ (1.NIMS)

Keywords:InAs, Molecular Beam Epitaxy, Dislocation

We studied growth temperature dependence of metamorphic growth of InAs on GaAs (111)A toward the optimization of the growth conditions. First, we grew 300 nm-InAs at 420 and 460C on GaAs(111)A. The 420C-sample exhibited slightly narrower peak width of X-ray rocking curve than that of the 460C-sample. However, the threading dislocation density of the 420C-sample was higher than that of the 460C-sample. We also investigated the effects of low temperature(320C)-grown thin InAs inserting at the interface between GaAs and InAs. Drastic reduction of peak width of X-ray rocking curve was observed.