[22p-P10-1~6] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[22p-P10-5] Growth conditions of the InGaAs thin film with 1-μm-band broadband and high-intensity emission (II)

〇Kosuke Iwaide¹, Nobuhiko Ozaki¹, Koki Okuno¹ (1.Wakayama Univ.)

Keywords:broadband light source, near-infrared light, InGaAs