[22p-P12-1~3] 15.7 Crystal characterization, impurities and crystal defects

[22p-P12-1] Investigation of Behavior of Intrinsic Point Defects Formation during Cz Heavy-Doped Silicon Growth by Numerical Modeling

〇Yuji Mukaiyama^1,2, Koji Sueoka³ (1.Graduate School of Okayama Pref. Univ., 2.STR Japan K.K., 3.Okayama Pref. Univ.)

Keywords:point defects, dopants, silicon

It is known that the concentration of point defects (vacancies and self-interstitial atoms) at the growth interface is affected by the additional dopants such as P, B, and Sb in Si single crystal growth by Cz method. In this study, we performed a transport analysis considering dopant segregation based on a three-dimensional unsteady growth numerical modeling, and investigated the effects of dopant concentration distribution and fluctuation on the formation of the intrinsic point defects at the growth interface.