[22p-P17-1~11] 15.4 III-V-group nitride crystals

[22p-P17-1] Evaluation and fabrication of BGaN neutron detector using in situ Mg activation annealing

〇Tomoyuki Natsume¹, Yusaku Hashimoto¹, Shun Nishikawa¹, Kosuke Hayashi¹, Seiya Kawasaki², Genichiro Wakabayashi³, Yoshio Honda⁴, Hiroshi Amano⁴, Yoku Inoue¹, Toru Aoki⁵, Takayuki Nakano^1,5 (1.Shizuoka Univ., 2.Nagoya Univ., 3.Kindai Univ., 4.IMaSS, Nagoya Univ., 5.R.I.E. Shizuoka Univ.)

Keywords:gallium nitride, semiconductor detector, neutron imaging