[22p-P17-1~11] 15.4 III-V-group nitride crystals

[22p-P17-7] Highly enhanced green emissions from InGaN/GaN quantum wells by localized surface plasmon resonance and thin dielectric film

〇(M1C)Yuki Kamei¹, Seiya Kaito¹, Tetsuya Matsuyama¹, Kenji Wada¹, Mitsuru Funato², Yoichi Kawakami², Koichi Okamoto¹ (1.Osaka Metro. Univ., 2.Kyoto Univ.)

Keywords:plasmonics, nitride semiconductor, InGaN

In the improvement of the efficiency of InGaN/GaN quantum wells by surface plasmon (SP) resonance, it has been difficult to adjust the SP resonance wavelength to the green wavelength range when using the Ag/GaN interface. We previously reported that the SP resonance wavelength can be shortened by sandwiching a SiO2 film between GaN and Ag, and the green emission of InGaN/GaN can be significantly enhanced by a factor of 16. In this report, we attempted to reveal the detailed mechanism of the highly enhanced photoluminescence (PL) by time-resolved PL measurements and temperature dependence of PL intensity.