[22p-P17-1~11] 15.4 III-V-group nitride crystals

[22p-P17-8] Observation of relaxation process in epitaxial growth of GaInN
by RF-MBE using XRD-RSM

〇(M1)Jo Takeuchi¹, Takuo Sasaki², Seiji Fujikawa², Haruka Yokoyama¹, Takeyoshi Onuma¹, Tohru Honda¹, Tomohiro Yamaguchi¹, Yasushi Nanishi³ (1.Kogakuin Univ., 2.QST, 3.Ritsumeikan Univ.)

Keywords:MBE, GaInN