[23a-A202-1~10] 6.2 Carbon-based thin films

△ [23a-A202-4] 2DHG Diamond MOSFETs with Multi-finger Structure for Gate Width Expansion and Improved RF Characteristics

〇(B)Yukihiro Chou¹, Masakazu Arai¹, Akira Takahashi¹, Fuga Asai¹, Yukiko Suzuki¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.Waseda Univ., 2.Kagami Memorial Inst.)

Keywords:diamond, radio frequency, MOSFET

In this study, we fabricated a high frequency 2DHG diamond MOSFET with multi-finger structure to expand the gate width by increasing the number of gate fingers for further incresing the output power. This device is effective for surpressing the self-heating and avoiding the increase of gate resistance. DC and RF performance of multi-finger devices were investigated, and compared with those of conventional double-finger devices. As a result, expanding the total gate width (W_GT) of the multi-finger devices did not degrade the drain current density, and this led to the increase of actual current. The maximum oscillation frequency (f_max) of the multi-finger devices increased by 50% compared with that of the double-finger devices.