[23a-A202-1~10] 6.2 Carbon-based thin films

△ [23a-A202-6] Radiation effects on 2DHG diamond MOSFETs with Boron-doped layer

〇(B)Xuezhen Jia¹, Yukiko Suzuki¹, Sukeyasu Deguchi², Fuga Asai¹, Akira Takahashi¹, Kosuke Ota¹, Atsushi Hiraiwa¹, Junichi Kaneko², Hiroshi Kawarada^1,3 (1.Waseda Univ., 2.Hokkaido Univ., 3.Kagami Memorial Inst.)

Keywords:Diamond, MOSFETs, Radiation hardness

In this study, we fabricated diamond MOSFETs with Boron-doped layer and 100-nm-thick atomic-layer-deposited Al₂O₃ film. We investigated its operation after 3MGy irradiation. The maximum drain current density (I_D) decreased from 787mA/mm to 517mA/mm after irradiation. Though the maximum drain current density and the transconductance decreased after irradiation, the gate modulation effect was still well observed.