[23a-A202-1~10] 6.2 Carbon-based thin films

△ [23a-A202-9] Channel miniaturization between superconducting source/drain and drain current modulation at extremely low temperatures (1.6 K) for the realization of superconducting FETs

〇(B)Masaharu Takeuchi¹, Chiyuki Wakabayashi¹, Yasuhiro Takahashi¹, Kosuke Ota¹, Taisuke Kageura^1,2, Yoshihiko Takano³, Minoru Tachiki³, Shuuichi Ooi³, Shunichi Arisawa³, Hiroshi Kawarada^1,4 (1.Waseda Univ., 2.AIST, 3.NIMS, 4.Kagami Memorial Inst.)

Keywords:superconductor, FET, Diamond

In superconducting FETs, the critical current can be controlled by applying a gate voltage. Diamond allows the fabrication of hybrid devices of semiconductors and superconductors with the same material. In this study, we investigated the feasibility of a diamond superconducting FET using superconducting diamond as the source and drain electrodes and hydrogen-terminated 2DHG as the channel by scaling down the channel length to 100 nm. The feasibility of diamond superconducting FETs was investigated. As a result, we confirmed that the FETs can be operated at cryogenic temperatures of 1.6 K.