[23a-B101-1~10] 8.2 プラズマ成膜・エッチング・表面処理

▲ [23a-B101-10] Effect of the surface engineered silicon quantum dots in hybrid perovskite solar cells

〇Svrcek Vladimir¹、Calum McDonald¹、Takuya Matsui¹ (1.National Institute of Advanced Industrial Science and Technology (AIST))

キーワード：surface engineered, quantum dots, perovskites

In this contribution, we will report on implementation of femtosecond (fs) laser surface engineered (SE) Si quantum dots (QDs) in perovskites. We discuss that SE Si-QDs prepared directly in DMF:DMSO colloidal solution is beneficial for room temperature photoluminescence and photovoltaic properties of perovskites hybrids. We investigated the incorporation of SE Si-QDs within two perovskites: formamidinium lead iodide (FAPbI₃) and the triple cation perovskite (RbMAFA)PbIBr (Rb_0.05(FA_0.83MA_0.17)_0.95PbI_0.83Br_0.17). Contrary to as prepared Si QDs incorporated to perovskite [1], we report superior properties of solar cells made from SE Si-QDs and both FAPbI₃ and (RbMAFA)PbIBr hybrids. Typical device performance of FAPbI₃ with and without SE Si-QDs is plotted statistically in a box plot shown in Figure 1. We observed superior device performance (particularly in J_SC) for FAPbI₃ SE Si-QDs with power conversion efficiencies exceeding 17 %. We attribute the improved J_SC to two possible reasons: increased diffusion lengths observed in perovskite: SE Si-QD hybrids, and/or the reabsorption of carriers. We demonstrate that an introduction of SE Si-QDs in two perovskite absorbers increases overall power conversion efficiency.
[1] C. Rocks, et al., Nano Energy 2018, 50, 245;
Acknowledgements: This work was supported by NEDO.