The 83rd JSAP Autumn Meeting 2022

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13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

[23a-B204-1~11] 13.7 Compound and power devices, process technology and characterization

Fri. Sep 23, 2022 9:00 AM - 12:00 PM B204 (B204)

Kozo Makiyama(Sumitomo Electric Industries, Ltd.)

9:00 AM - 9:15 AM

[23a-B204-1] MOCVD growth of C-doped GaAsSb on GaN with Surface Arsenide Layer

〇Takuya Hoshi1, Yuki Yoshiya1, Hiroki Sugiyama1, Fumito Nakajima1 (1.NTT Device Technology Labs.)

Keywords:GaN HEMT, Arsenidation, MOCVD