[23a-C101-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

[23a-C101-12] Study on photosensitivity of Mg₂Si photodiodes with front and back side photo incidence structures

〇Rikuto Nakamura¹, Daiju Tsuya², Misa Yoshida², Haruhiko Udono¹ (1.Ibaraki Univ., 2.NIMS)

Keywords:Magnesium silicide, Photodiode, Semiconductor

A pn junction photodiode (PD) on Mg₂Si substrate is attracting attention as an inexpensive and general-purpose photodetector in the short-wavelength infrared region. In this study, to clarify the structure and physical properties that affect the photosensitivity of Mg₂Si-PD, we fabricated front- and back-illuminated pn-junction PDs and investigated their photosensitivity at different bias and temperature.