12:00 PM - 12:15 PM
[23a-C101-12] Study on photosensitivity of Mg2Si photodiodes with front and back side photo incidence structures
Keywords:Magnesium silicide, Photodiode, Semiconductor
A pn junction photodiode (PD) on Mg2Si substrate is attracting attention as an inexpensive and general-purpose photodetector in the short-wavelength infrared region. In this study, to clarify the structure and physical properties that affect the photosensitivity of Mg2Si-PD, we fabricated front- and back-illuminated pn-junction PDs and investigated their photosensitivity at different bias and temperature.