The 83rd JSAP Autumn Meeting 2022

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Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[23a-C101-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

Fri. Sep 23, 2022 9:00 AM - 12:15 PM C101 (C101)

Haruhiko Udono(Ibaraki Univ.), Hirokazu Tatsuoka(Shizuoka Univ.)

10:00 AM - 10:15 AM

[23a-C101-5] Fabrication of high Hall density p-type B-doped BaSi2 films formed by sputtering

〇Hayato Hasebe1, Kazuki Kido1, Haruki Takenaka1, Masami Mesuda2, Kaoru Toko1, Takashi Suemasu1 (1.Tsukuba Univ., 2.Tosoh Corp.)

Keywords:semiconductor, sputtering, solar cell