The 83rd JSAP Autumn Meeting 2022

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Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[23a-C101-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

Fri. Sep 23, 2022 9:00 AM - 12:15 PM C101 (C101)

Haruhiko Udono(Ibaraki Univ.), Hirokazu Tatsuoka(Shizuoka Univ.)

10:45 AM - 11:00 AM

[23a-C101-7] PL properties in SiO2/β-FeSi2/SiO2 stacked structures

〇Ren Yoshihara1, Yuya Oishi1, Yoshikazu Terai1 (1.Kyushu Inst. of Tech.)

Keywords:beta-FeSi2, silicide semiconductor

β-FeSi2 is expected to be a new material for optical communication wavelengths. However, its PL strength disappears at high temperatures. One of the reasons for this is the small valence band offset at the β-FeSi2/Si hetero-interface, which results in weak hole confinement. On the other hand, strong hole confinement is expected in β-FeSi2/SiO2. In this study, we report on the fabrication of SiO2/β-FeSi2 stacked structures and their 1.5 μm emission.