[23a-C101-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

[23a-C101-8] Temperature dependence of 1.5 µm photoluminescence in Si/β-(Fe_1-xRu_x)Si₂/Si structure.

〇Yuya Oishi¹, Ren Yoshihara¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech)

Keywords:beta-FeSi2, silicide semiconductor

β-FeSi₂ is expected to be a new light source material because it emits light in the optical communication wavelength band. However, sufficient PL intensity has not been obtained at room temperature. Therefore, we are aiming to increase the transition probability by substituting a part of Fe with Ru. However, mixed crystals may adversely affect the luminescence properties. In this study, we measured the temperature dependence of PL spectra of β-(Fe_1-xRu_x)Si₂ samples and verified whether the addition of Ru increases the non-radiative transition processes.