11:00 AM - 11:15 AM
[23a-C101-8] Temperature dependence of 1.5 µm photoluminescence in Si/β-(Fe1-xRux)Si2/Si structure.
Keywords:beta-FeSi2, silicide semiconductor
β-FeSi2 is expected to be a new light source material because it emits light in the optical communication wavelength band. However, sufficient PL intensity has not been obtained at room temperature. Therefore, we are aiming to increase the transition probability by substituting a part of Fe with Ru. However, mixed crystals may adversely affect the luminescence properties. In this study, we measured the temperature dependence of PL spectra of β-(Fe1-xRux)Si2 samples and verified whether the addition of Ru increases the non-radiative transition processes.